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Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Photo-induced effect on the rectification behaviour of Al/Al₂O₃/InTe/Bi sandwich structuresROUSINA, R; SHIVAKUMAR, G. K.Crystal research and technology (1979). 1988, Vol 23, Num 9, pp K133-K135, issn 0232-1300Article

Analysis of characteristics of silicon metal/insulator semiconductor tunnel diodes with D.C.-plasma-grown oxideBECK, R. B; RUZYLLO, J.Thin solid films. 1986, Vol 136, Num 2, pp 173-180, issn 0040-6090Article

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Electronic structure of the Fe/Ge(110) interfacePICKETT, W. E; PAPACONSTANTOPOULOS, D. A.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8372-8378, issn 0163-1829Article

Edge channels and the role of contacts in the quantum hall regimeMÜLLER, G; WEISS, D; KOCH, S et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 12, pp 7633-7636, issn 0163-1829Article

Relationship of ambient deposition conditions to formation of thermally activated voids in Al/Si interconnectsTICE, W; SLUSSER, G.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 106-107, issn 0734-211X, 2 p.Article

Effects of InP surface treatment on the electrical properties and structures of AlN/n-InP interfaceFUJIEDA, S; AKIMOTO, K; HIROSAWA, I et al.Japanese journal of applied physics. 1989, Vol 28, Num 1, pp L16-L18, issn 0021-4922, part 2Article

Experimental Richardson constant of metal-semiconductor Schottky barrier contactsTAM, N. T; CHOT, T.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp K91-K95, issn 0031-8965Article

Effective Richardson constant of sputtered Pt-Si Schottky contactsTOYAMA, N.Journal of applied physics. 1988, Vol 64, Num 5, pp 2515-2518, issn 0021-8979Article

Influence des états localisés dans la barrière sur le courant tunnel de fluctuations traversant le contact métal-semiconducteurRAJKH, M. EH; RUZIN, I. M; SHKLOVSKIJ, B. I et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 11, pp 1979-1985, issn 0015-3222Article

Chemical reactions and Schottky barrier formation at Cr/n-CdTe interfacesDHARMADASA, I. M; PATTERSON, M. H; WILLIAMS, R. H et al.Semiconductor science and technology. 1988, Vol 3, Num 9, pp 926-930, issn 0268-1242Article

Direct observation of solid-phase epitaxial growth of Si at contact holes through Al-Si alloyHIRASHITA, N; KINOSHITA, M; AJIOKA, T et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 12, pp 3159-3160, issn 0013-4651Article

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Infrared absorption in PtSi-Si interface statesFLOHR, T; SCHULZ, M.Applied physics letters. 1986, Vol 48, Num 22, pp 1534-1535, issn 0003-6951Article

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Alkyl monolayer-passivated metal-semiconductor diodes: Molecular tunability and electron transportLIU, Yong-Jun; YU, Hua-Zhong.ChemPhysChem (Print). 2002, Vol 3, Num 9, pp 799-802, issn 1439-4235Article

MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devicesWERNERSSON, L.-E; BORGSTRÖM, M; GUSTAFSON, B et al.Journal of crystal growth. 2000, Vol 221, pp 704-712, issn 0022-0248Conference Paper

High barrier Ag, Al, Au, Pt/InGaAs engottky diodesWANG, H. T; CHANG, L. B; CHOU, S. T et al.International conference on microelectronic. 1997, pp 303-308, isbn 0-7803-3664-X, 2VolConference Paper

Reduction of the Au/p-ZnSe(100) Schottky barrier height using a thin Se interlayerCHEN, W; GAINES, J; PONZONI, C et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, issn 0022-0248, 1078Conference Paper

Electroluminescence spectra from silicon devicesBISCHOFF, M; KIEFER, B; PAGNIA, H et al.International journal of electronics. 1994, Vol 76, Num 5, pp 841-844, issn 0020-7217Conference Paper

Strain fields due to differential dilatation at metal/semiconductor contacts and resulting piezoelectrical fields in GaAsFARVACQUE, J. L; FRANCOIS, P.Solid-state electronics. 1993, Vol 36, Num 2, pp 205-211, issn 0038-1101Article

Optical properties of the layered transition-metal-dichalcogenide ReS₂ : anisotropy in the van der Waals planeFRIEMELT, K; LUX-STEINER, M.-C; BUCHER, E et al.Journal of applied physics. 1993, Vol 74, Num 8, pp 5266-5268, issn 0021-8979Article